Configuration: | 6-Pack |
---|---|
Collector- Emitter Voltage Vceo Max: | 750 V |
Collector-Emitter Saturation Voltage: | 1.1 V |
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Product Attribute | Attribute Value |
Manufacturer: | Infineon |
Product Category: | IGBT Modules |
Product: | IGBT Silicon Modules |
Configuration: | 6-Pack |
Collector- Emitter Voltage VCEO Max: | 750 V |
Collector-Emitter Saturation Voltage: | 1.1 V |
Continuous Collector Current at 25 C: | 450 A |
Gate-Emitter Leakage Current: | 400 nA |
Pd - Power Dissipation: | 714 W |
Package / Case: | Module |
Minimum Operating Temperature: | - 40 C |
Maximum Operating Temperature: | + 150 C |
Packaging: | Tray |
Brand: | Infineon Technologies |
Maximum Gate Emitter Voltage: | 20 V |
Mounting Style: | Chassis Mount |
Product Type: | IGBT Modules |
Subcategory: | IGBTs |
Technology: | Si |