| Manufacturing Technology: | Optoelectronic Semiconductor |
|---|---|
| Type: | N-type Semiconductor |
| Package: | DIP(Dual In-line Package) |
|
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NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is made up of N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a large active area, high UV sensitivity yet very low noise, delivering a high S/N even at low light levels. NMOS linear image sensors also offer excellent output linearity and wide dynamic range. S3924-512Q has a current-integration readout circuit utilizing the video line and an impedance conversion circuit. The output is available in boxcar waveform allowing signal readout with a simple external circuit. The photodiode of S3924-512Q has a height of 2.5 mm and is arrayed in a row at a spacing of 25 μm. Quartz glass is the standard window material.
Features
- Built-in current-integration readout circuit utilizing video line capacitance and impedance conversion circuit (boxcar waveform output)
- Wide active area
- High UV sensitivity with good stability
- Low dark current and high saturation charge allow a long integration time and a wide dynamic range at room temperature
- Excellent output linearity and sensitivity spatial uniformity
- Low voltage, single power supply operation
- Start pulse, clock pulse and video line reset pulse are CMOS logic compatible
| Manufacturer | Hamamatsu |
| Name | Image Sensor |
| Package | 1PCS/BAG |
| HS | 8536.90.4000 |
EMI International Co., Ltd is a leading IC Electronic Components Supplier in China, agent of France NICOMATIC, Korea ITF filter, Analogy Semi, Chongqing Southwest Integration. And distributor of TI, ST,ADI,ATMEL, Cypress,Onsemi,Infineon,....etc.
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